收藏本站
QS5U12
Transistors
Absolute maximum ratings (Ta=25 ° C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
30
12
Unit
V
V
Drain current
Source current
(Body diode)
Channel temperature
Power dissipation
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
Tch
P D ? 3
± 2.0
± 8.0
0.8
3.2
150
0.9
A
A
A
A
° C
W/ELEMENT
<Di>
Repetitive peak reverse voltage
Reverse voltage
Forward current
V RM
V R
I F
25
20
1.0
V
V
A
Forward current surge peak
Junction temperature
Power dissipation
I FSM
Tj
P D
? 2
? 3
3.0
150
0.7
A
° C
W/ELEMENT
<MOSFET AND Di>
Total power dissipation
Range of Storage temperature
P D ? 3
Tstg
1.25
? 55 to +150
W / TOTAL
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1% ? 2 60Hz ? 1cyc. ? 3 Mounted on a ceramic board
Electrical characteristics (Ta=25 ° C)
<MOSFET>
Parameter
Gate-source leakage
Symbol
I GSS
Min.
?
Typ.
?
Max.
10
Unit
μ A
Conditions
V GS = 12V / V DS = 0V
Drain-source breakdown voltage V (BR) DSS
30
?
?
V
I D = 1mA, / V GS = 0V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
I DSS
V GS (th)
R DS (on) ?
?
0.5
?
?
?
?
?
71
76
110
1
1.5
100
107
154
μ A
V
m ?
m ?
m ?
V DS = 30V / V GS = 0V
V DS = 10V / I D = 1mA
I D = 2.0A, V GS = 4.5V
I D = 2.0A, V GS = 4V
I D = 2.0A, V GS = 2.5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Y fs
C iss
C oss
C rss
t d (on)
t r
t d (off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
1.5
?
?
?
?
?
?
?
?
?
?
?
175
50
25
8
10
21
8
2.8
0.6
0.8
?
?
?
?
?
?
?
?
3.9
?
?
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V DS = 10V, I D = 2.0A
V DS = 10V
V GS = 0V
f = 1MHz
I D = 1.0A
V DD 15V
V GS = 4.5V
R L = 15 ?
R G = 10 ?
V DD 15V
V GS = 4.5V
I D = 2.0A
? Pulsed
<Body diode (source-drain)>
Forward voltage
V SD
?
?
?
1.2
V
I S = 3.2A / V GS =0V
? Pulsed
<Di>
Forward voltage
Reverse current
V F
I R
?
?
?
?
0.45
200
V
μ A
I F = 1.0A
V R = 20V
Rev.B
2/4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
QS5U13TR MOSFET N-CH 30V 2A TSMT5
QS5U16TR MOSFET N-CH 30V 2A TSMT5
QS5U17TR MOSFET N-CH 30V 2A TSMT5
QS5U21TR MOSFET P-CH 20V 1.5A TSMT5
QS5U23TR MOSFET P-CH 20V 1.5A TSMT5
QS5U26TR MOSFET P-CH 20V 1.5A TSMT5
QS5U27TR MOSFET P-CH 20V 1.5A TSMT5
QS5U28TR MOSFET P-CH 20V 2A TSMT5
相关代理商/技术参数
QS5U13 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (30V, 2.0A)
QS5U13_06 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive NchSBD MOS FET
QS5U13TR 功能描述:MOSFET N-CH 30V 2A TSMT5 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U16 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
QS5U16_06 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET
QS5U16TR 功能描述:MOSFET N-CH 30V 2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U17 制造商:ROHM Semiconductor 功能描述:MOSFET,Nch+SBD,Vdss=30V,Id=2A,TSMT5
QS5U17_1 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+SBD MOS FET